Semiconductor Device and Method of Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Wei Hu, Po-Chin Nien
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Abstract
A method of forming a semiconductor device is provided. The method includes forming a first film over an active region of a first side of a semiconductor substrate and a second film over a second side of the semiconductor substrate opposing to the first side of the semiconductor substrate; applying a chemical mechanical polishing to remove at least a portion of the second film; after the chemical mechanical polishing, forming a photoresist layer over the first film; and patterning the photoresist layer using an extreme ultraviolet radiation.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a first film over an active region of a first side of a semiconductor substrate and a second film over a second side of the semiconductor substrate opposing to the first side of the semiconductor substrate;
- applying a chemical mechanical polishing to remove at least a portion of the second film;
- after applying the chemical mechanical polishing, forming a photoresist layer over the first film;
- and
- patterning the photoresist layer using an extreme ultraviolet radiation.
A method of forming a semiconductor device, the method comprising:
- forming a plurality of fins over a first side of a semiconductor substrate;
- forming a first film over the fins and a second film over a second side of the semiconductor substrate opposing to the first side of the semiconductor substrate;
- applying a first chemical mechanical polishing to remove a first thickness from the second film;
- and
- patterning the first film.
A method of forming a semiconductor device, comprising:
- forming a first film over an active region of a first side of a semiconductor substrate and a second film over a second side of the semiconductor substrate opposing to the first side of the semiconductor substrate in a same process;
- applying a first chemical mechanical polishing to planarize the second film;
- after applying the first chemical mechanical polishing, patterning the first film to form a dummy gate structure;
- and
- replacing the dummy gate structure with a metal gate structure.
Dependencies are inferred from the claim text.