Methods of manufacturing semiconductor structure

Abstract

The present application provides a method of manufacturing a semiconductor structure. The manufacturing method includes following steps: at step S1: forming a first epitaxial structure above a substrate, where the first epitaxial structure is doped with a doping element; at step S2: forming a sacrificial layer above the first epitaxial structure; at step S3: etching the sacrificial layer; at step S4: growing an insertion layer above the first epitaxial structure when the etching of the sacrificial layer is completed; and at step S5: growing a second epitaxial structure above the insertion layer; before proceeding to step S4, repeating step S2 and step S3, until a concentration of the doping element in the first epitaxial structure is lower than a predetermined threshold. In the present application, sacrificial layers are formed above the first epitaxial structure, and the sacrificial layers are repeatedly etched, so that the concentration of the doping element in the first epitaxial structure is lower than the predetermined threshold, thereby preventing the doping element in the first epitaxial structure from migrating upward into an upper epitaxial structure, ensuring a mobility of electrons in the upper epitaxial structure, so as to improve a performance of a device.

Dependencies are inferred from the claim text.