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AssigneeNational University of Singapore
InventorsBarbaros OEZYILMAZ, Chee Tat TOH, Irfan Haider ABIDI
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A seed layer for inducing nucleation to form a layer of material is described. In an embodiment, the seed layer comprising a layer of two-dimensional monolayer amorphous material having a disordered atomic structure adapted to create localised electronic states to form electric potential wells for bonding adatoms to a surface of the seed layer via van der Waals interaction to form the layer of material, wherein each of the electric potential wells has a potential energy larger in magnitude than surrounding thermal energy to capture adatoms on the surface of the seed layer. Embodiments in relation to a method for forming the seed layer, a heterostructure comprising the seed layer, a method for forming the heterostructure comprising the seed layer, a device comprising the heterostructure and a method of enhancing vdW interaction between adatoms and a surface of the seed layer are also described.
A seed layer for inducing nucleation to form a layer of material, the seed layer comprising a layer of two-dimensional (2D) monolayer amorphous material having a disordered atomic structure adapted to create localised electronic states to form electric potential wells for bonding adatoms to a surface of the seed layer via van der Waals (vdW) interaction to form the layer of material, wherein each of the electric potential wells has a potential energy larger in magnitude than surrounding thermal energy to capture adatoms on the surface of the seed layer.
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A heterostructure comprising:
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A method of forming a layer of material on a substrate, the method comprising:
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Dependencies are inferred from the claim text.