Method and apparatus for forming silicon carbide-containing film

A method of forming a silicon carbide-containing film on a substrate in a processing container in which vacuum exhaust is performed, the method comprising:

• accommodating the substrate in the processing container;
• adsorbing an organic compound having an unsaturated carbon bond on the substrate by supplying a carbon precursor gas including the organic compound to the processing container in which the substrate is accommodated;
• and
• reacting the organic compound adsorbed on the substrate with a silicon compound by supplying a silicon precursor gas including the silicon compound to the processing container after the carbon precursor gas is supplied,
• wherein the adsorbing the organic compound on the substrate and the reacting the organic compound with the silicon compound are alternately repeated multiple times to form the silicon carbide-containing film,
• wherein, in the adsorbing the organic compound, the vacuum exhaust is restricted to cause the carbon precursor gas to stay in the processing container, and then the restriction of the vacuum exhaust is released to discharge the carbon precursor gas in the processing container, and
• wherein the supply of the silicon precursor gas to the processing container is stopped during the reacting the organic compound adsorbed on the substrate with the silicon compound, and the vacuum exhaust is not restricted after the supply of the silicon precursor gas is stopped.

An apparatus of forming a silicon carbide-containing film on a substrate, the apparatus comprising:

• a processing container configured to accommodate the substrate;
• a carbon precursor supplier configured to supply a carbon precursor gas including an organic compound having an unsaturated carbon bond to the processing container;
• a silicon precursor supplier configured to supply a silicon precursor gas including a silicon compound to the processing container;
• a vacuum exhauster configured to execute vacuum exhaust of gas in the processing container;
• and
• a controller,
• wherein the controller is configured to execute:
• a control of forming the silicon carbide-containing film by alternately repeating multiple times a step of adsorbing the organic compound on the substrate by supplying the carbon precursor gas from the carbon precursor supplier to the processing container in which vacuum exhaust is performed by the vacuum exhauster and the substrate is accommodated and a step of reacting the organic compound adsorbed on the substrate with the silicon compound by supplying the silicon precursor gas from the silicon precursor supplier to the processing container after the carbon precursor gas is supplied to the processing container;
• a control of the vacuum exhauster for restricting the vacuum exhaust to cause the carbon precursor gas to stay in the processing container in the step of adsorbing the organic compound, and then releasing the restriction of the vacuum exhaust to discharge the carbon precursor gas in the processing container;
• and
• a control of stopping the supply of the silicon precursor gas to the processing container during the step of reacting the organic compound adsorbed on the substrate with the silicon compound, and continuing the vacuum exhaust by the vacuum exhauster such that the restriction of the vacuum exhaust is not performed after stopping the supply of the silicon precursor gas.