Method of processing substrate
AssigneeTes Co., Ltd
InventorsBong-Soo KWON, Se-Woong BAE, Eun-Jin SONG
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Abstract
There is provided a method of processing a substrate comprising an ONO stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate. The method includes: (a) primarily dry-etching silicon nitride layers of the ONO stack; (b) producing oxygen radicals and processing silicon oxide layers of the ONO stack with the oxygen radicals; and (c) secondarily dry-etching the silicon nitride layers of the ONO stack.
Claims17
A method of processing a substrate comprising an ONO stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate, comprising:
- (a) primarily dry-etching silicon nitride layers of the ONO stack;
- (b) producing oxygen radicals and processing silicon oxide layers of the ONO stack with the oxygen radicals;
- and
- (c) secondarily dry-etching the silicon nitride layers of the ONO stack.
A method of processing a substrate com comprising an ONO stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate, comprising:
- (a) dry-etching silicon nitride layers of the ONO stack m (a natural number greater than or equal to 2) times;
- (b) dry-etching silicon nitride layers of the ONO stack n (a natural number greater than or equal to 2) times,
- wherein steps (a) and (b) comprise one or more oxygen radical processing steps of processing silicon oxide layers of the ONO stack with oxygen radicals between dry etching and dry etching.
Dependencies are inferred from the claim text.