Apparatus and method for processing substrate

A method for processing a substrate comprising:

• introducing a substrate having a semiconductor device formed thereon into a chamber, wherein the semiconductor device includes a first interlayer insulating film, a second interlayer insulating film formed on the first interlayer insulating film, a semiconductor pattern penetrating the first interlayer insulating film and the second interlayer insulating film, a charge trap film conformally formed along an upper surface of the first interlayer insulating film, a lower surface of the second interlayer insulating film, and a sidewall of the semiconductor pattern, a blocking film conformally formed along the charge trap film, and a conductive film formed to be in contact with the blocking film, wherein a portion of the blocking film is exposed by the conductive film,
• forming a first plasma in the chamber by using a first gas containing chlorine,
• forming a second plasma in the chamber by using a second gas containing oxygen,
• providing a precursor into the chamber to react the precursor with the blocking film exposed by the conductive film, and
• removing at least a portion of the blocking film exposed by the conductive film by repeating forming the first plasma, forming the second plasma, and providing the precursor.

An apparatus for processing a substrate comprising:

• a heat source installed in a chamber and for heating a substrate;
• a gas supply system for supplying a first gas, a second gas and a precursor into the chamber;
• an electrode system for generating plasma using the first gas or the second gas supplied into the chamber;
• and
• a controller for controlling the heat source, the gas supply system and the electrode system to atomic layer etch a target layer of the substrate,
• wherein the atomic layer etching comprises,
• supplying a first gas containing chlorine into the chamber and forming a first plasma based on the first gas to first reform the target layer,
• supplying a second gas containing oxygen into the chamber and forming a second plasma based on the second gas to second reform the first reformed target layer,
• providing a precursor into the chamber to react the second reformed target layer with the precursor, and
• removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.