Plasma processing apparatus and method of manufacturing semiconductor device by using same

A plasma processing apparatus comprising:

• a plasma chamber comprising a first area and a second area separated from the first area;
• an electrostatic chuck provided in the first area of the plasma chamber, and configured to support a wafer;
• a ring-shaped edge ring surrounding the electrostatic chuck;
• an insulating isolation provided at a lower portion of the electrostatic chuck, and configured to insulate the electrostatic chuck;
• a first radio frequency (RF) power source configured to transmit pieces of first RF power to the first area, wherein a first piece of the plurality of pieces of first RF power has a first frequency and a second piece of the pieces of first RF power has a second frequency different from the first frequency;
• a second RF power source configured to transmit second RF power to the second area;
• a distribution plate arranged inside the plasma chamber, the distribution plate comprising a gas hole and an ion filter configured to filter plasma;
• a controller configured to control the first RF power source and the second RF power source;
• and
• a first coil and a second coil arranged in the second area,
• wherein the first coil and the second coil are positioned in a same plane and the first coil surrounds the second coil, and
• wherein the controller is further configured to:
• spatially control the plasma in the first area and the second area by controlling a signal of a current applied to the first coil and a signal of a current applied to the second coil, and
• temporally control the plasma in the first area and the second area by controlling at least one of a signal of the pieces of the first RF power transmitted from the first RF power source or a signal of of the second RF power transmitted from the second RF power source.

A method of manufacturing a semiconductor device, the method comprising:

• loading a wafer onto an electrostatic chuck inside a plasma chamber comprising a first area and a second area, wherein a first coil and a second coil, which are spatially separated from each other, are arranged in the second area;
• injecting a process gas into the plasma chamber;
• generating plasma by supplying second radio frequency (RF) power to the second area of the plasma chamber;
• processing the wafer by supplying pieces of first RF power to the first area of the plasma chamber;
• and
• unloading the wafer from the electrostatic chuck,
• wherein a signal of a current applied to the first coil and a signal of a current applied to the second coil are controlled such that the plasma in the first area or the second area is spatially controlled, and
• wherein at least one of a signal of the pieces of first RF power or a signal of the second RF power is controlled such that the plasma in the first area or the second area is temporally controlled.