Apparatus and method for processing substrate

An apparatus for processing a substrate, comprising:

• a housing;
• a substrate support unit disposed inside the housing and configured to support a substrate;
• a shower head unit disposed inside the housing and configured to supply a process gas onto the substrate;
• an antenna unit disposed outside the housing;
• and
• a plasma generating unit configured to generate, inside the housing, a plasma for use in processing the substrate on the basis of the process gas, wherein:
• the plasma generating unit simultaneously generates a first plasma and a second plasma using the antenna unit, the shower head unit, and the substrate support unit as electrodes,
• the first plasma is an inductively coupled plasma (ICP), the second plasma is a capacitively coupled plasma (CCP),
• the antenna unit is attached to an outer sidewall of the housing, and
• the plasma generating unit simultaneously increases plasma density and plasma uniformity on the basis of an electric field formed on the substrate in a width direction of the substrate and an electric field formed on the substrate in a height direction of the substrate.

A method of processing a substrate, comprising:

• disposing a substrate on a substrate support unit disposed in a housing;
• supplying a process gas onto the substrate by using a shower head unit disposed inside the housing;
• and
• generating, inside the housing, a plasma for use in processing the substrate on the basis of the process gas,
• wherein the generating of the plasma comprises generating both a first plasma and a second plasma by using an antenna unit disposed outside the housing and the shower head unit as electrodes and simultaneously increasing plasma density and plasma uniformity on the basis of an electric field formed on the substrate in a width direction of the substrate and an electric field formed on the substrate in a height direction of the substrate.