Microchannel sensor and method of manufacturing the same
AssigneeUniversität Hamburg
InventorsRobert BLICK, Stefanie HAUGG, Robert ZIEROLD
Life of this patent
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Abstract
A microchannel sensor for detecting radiation and/or particles, the microchannel sensor comprising at least one sensor substrate, wherein said sensor substrate comprises a plurality of channels extending from a first side of the substrate to an opposite side of the substrate, wherein said channels are arranged along a channel axis which is tilted relative a normal axis of said substrate, and wherein said plurality of channels comprise a first set of channels with a first cross section and a second set of channels with a second cross section being different from said first cross section.
Claims15
A microchannel sensor for detecting radiation and/or particles, the microchannel sensor comprising at least one sensor substrate, wherein said sensor substrate comprises a plurality of channels extending from a first side of the substrate to an opposite side of the substrate, wherein said channels are arranged along a channel axis which is tilted relative a normal axis of said substrate, and wherein said plurality of channels comprise a first set of channels with a first cross section and a second set of channels with a second cross section being different from said first cross section.
A method of manufacturing a sensor substrate for a microchannel sensor by step-wise exposing a voxel of a resist to radiation for forming a three-dimensional structure, the method comprising:
- setting a step size to a first resolution;
- setting a voxel volume to a first volume;
- exposing a first set of voxels of said first volume to radiation using said first resolution;
- setting the step size to a second resolution being smaller than said first resolution, or, respectively, greater than said first resolution;
- setting the voxel volume to a second volume being smaller than said first volume, or, respectively, greater than said first volume;
- and
- exposing a second set of voxels of said second volume to radiation using said second resolution.
Dependencies are inferred from the claim text.