Configuration method and reading method of 3d memory device, 3d memory device, and memory system
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsHongtao Liu, Songmin Jiang, Dejia Huang
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Abstract
The present disclosure provides a configuration method and a reading method for a 3D memory, a 3D memory and system. The configuration method includes: writing test data into a plurality of selected memory cells corresponding to a selected word line in one of a plurality of memory blocks of the memory device; determining threshold voltages of the plurality of selected memory cells; and obtaining a relationship table indicating a corresponding relationship between a number of a subset of the selected memory cells that have threshold voltages lower than a preset voltage and a pass voltage required for performing a read operation on the one memory block.
Claims20
A method for configurating a memory device, comprising:
- writing test data into a plurality of selected memory cells corresponding to a selected word line in one of a plurality of memory blocks of the memory device;
- determining threshold voltages of the plurality of selected memory cells;
- and
- obtaining a relationship table indicating a corresponding relationship between a number of a subset of the selected memory cells that have threshold voltages lower than a preset voltage and a pass voltage required for performing a read operation on the one memory block.
A method for reading data from a memory device, comprising:
- receiving a data reading request comprising an address of data to be read;
- determining, based on the address, a memory block from a plurality of memory blocks of the memory device where the data to be read is stored;
- applying a preset voltage to a selected word line of the memory block to obtain a number of a subset of selected memory cells corresponding to the selected word line that have threshold voltages lower than the preset voltage;
- determining a pass voltage required for performing a read operation on the memory block corresponding to the number based on a relationship table indicating a corresponding relationship between the pass voltage and the number of the subset of the selected memory cells that have threshold voltages lower than the preset voltage;
- and
- applying the pass voltage on non-selected word lines and applying a read voltage on the selected word line to read the data.
A three-dimensional memory device, comprising:
- a memory array comprising a plurality of memory blocks;
- and
- a control circuit connected with the memory array through a memory interface;
- wherein the control circuit is configured to:
- write test data into a plurality of selected memory cells corresponding to a selected word line in a memory block of the memory device;
- measure threshold voltages of the plurality of selected memory cells;
- and
- obtain a relationship table indicating a corresponding relationship between a number of a subset of the selected memory cells that have threshold voltages lower than a preset voltage and a pass voltage required for performing a read operation on the memory block.
(canceled)
Dependencies are inferred from the claim text.