Non-local antiferromagnetic memory storage

An electrically switchable antiferromagnetic device, the device comprising:

• (a) a device body with at least one neck extending radially from the body, said body formed from crystalline FexNbS2;
• (b) one or more electrodes mounted to said device body, said electrodes configured to be electrically coupled to a source of current;
• (c) a first read out electrode at a first distance from a center of the device body configured to measure a resistance state of said device body at said neck;
• and
• (d) a second read out electrode at a second distance the center of the device body;
• (e) wherein an antiferromagnetic order of said device body rotates with the application of current to said write in electrode from said current source;
• and
• (f) wherein a non-local resistance signal is measured by the first and second read out electrodes at different locations on the neck.

A method of manipulating antiferromagnetic ordering in an antiferromagnetic material, the method comprising:

• (a) forming an active element with a body and a neck extending radially from the body, said active element formed from a single crystal of FexNbS2;
• (b) forming a plurality of write-in electrodes on said body of the active element, said electrodes electrically coupled to a source of current;
• (c) forming a plurality of read-out electrodes on said neck of said active element, said electrodes;
• (d) applying a current pulse to one write-in electrode;
• and
• (e) measuring a resistance of at least one read-out electrode to determine a resistance state.