Nitride-based semiconductor device and method for manufacturing the same

A nitride-based semiconductor device, comprising:

• a first nitride-based semiconductor layer doped to a first conductivity type;
• a second nitride-based semiconductor layer disposed over the first nitride-based semiconductor layer;
• a lattice layer disposed between the first and second nitride-based semiconductor layers and doped to the first conductivity type, wherein the lattice layer comprises a plurality of first III-V layers and a plurality of second III-V layers alternatively stacked, each of the first III-V layers has a high resistivity region and a current aperture enclosed by the high resistivity region, the high resistivity region comprises more metal oxides than the current aperture so as to achieve a resistivity higher than that of the current aperture, wherein at least two of the current apertures have different dimensions such that at least two of interfaces formed between the high resistivity regions and the current apertures misalign with each other;
• a third nitride-based semiconductor layer disposed over the second nitride-based semiconductor layer;
• a first source electrode and a second electrode disposed over the third nitride-based semiconductor layer;
• and
• a gate electrode disposed over the third nitride-based semiconductor layer and between the first and second source electrodes, wherein the gate electrode aligns with the current aperture.