Side-gated semiconductor-superconductor hybrid devices

A semiconductor-superconductor hybrid device comprising:

• a substrate;
• a first semiconductor component arranged on the substrate;
• a superconductor component arranged to be capable of energy level hybridisation with the first semiconductor component;
• and
• a second semiconductor component arranged as a gate electrode for gating the first semiconductor component.

A method of fabricating a semiconductor-superconductor hybrid device, which method comprises:

• forming a mask on a substrate, the mask defining respective areas for a first semiconductor component and a second semiconductor component;
• growing the first semiconductor component and the second semiconductor component simultaneously in the respective areas;
• and
• forming a semiconductor-superconductor hybrid structure by forming a superconductor component selectively over at least a portion of the first semiconductor component;
• wherein the respective areas are selected such that the second semiconductor component is arranged as a gate electrode for gating the first semiconductor component.

A semiconductor-superconductor hybrid device, comprising:

• a substrate;
• a semiconductor component arranged on the substrate;
• a gate electrode for gating the semiconductor component;
• and
• a superconductor component capable of undergoing energy level hybridisation with the semiconductor component;
• wherein the gate electrode is arranged in a channel in the substrate.