Short circuit detection and protection for an insulated gate component by monitoring and checking the gate voltage
AssigneeThales
InventorFrancis ABDESSELAM
Life of this patent
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Abstract
A power stage includes a power transistor controlled via a driver, the power transistor comprising three terminals, including a collector c, an emitter e and a gate g linked to the driver, the power stage comprising a detection device for detecting a short-circuit current cc between the collector c and the emitter e, the detection device comprising a voltage sensor capable of detecting a voltage Vge at the gate g of the power transistor outside of a predefined voltage range.
Claims5
A power stage comprising a power transistor controlled via a driver, the power transistor comprising three terminals including a collector c, an emitter e and a gate g linked to the driver, the power stage comprising a detection device for detecting a short-circuit current cc between the collector c and the emitter e, the detection device comprising a voltage sensor capable of detecting a voltage Vge at the gate g of the power transistor outside of a predefined voltage range, the detection device comprising a capacitance measurement sensor configured to measure an equivalent capacitance value Cge at the gate g of the power transistor and compare the gate equivalent capacitance value Cge to a predefined capacitance value, the detection device comprising an energy storage device configured to deliver an additional voltage to the gate g if the capacitance measurement sensor detects that the value of the gate equivalent capacitance Cge is lower than the predefined capacitance value.
Dependencies are inferred from the claim text.