Hydrogen management in plasma deposited films

A semiconductor processing method comprising:

• flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber, wherein a substrate is housed within the processing region, and wherein the substrate is maintained at a temperature below or about 450° C.;
• flowing a catalytic precursor into the processing region of the semiconductor processing chamber;
• striking a plasma of the silicon-containing precursor and the catalytic precursor;
• and
• forming a layer of amorphous silicon on a semiconductor substrate, wherein the layer of amorphous silicon as-deposited is characterized by less than or about 3% hydrogen incorporation.

A semiconductor processing method comprising:

• flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber, wherein a substrate is housed within the processing region, and wherein the substrate is maintained at a temperature below or about 450° C.;
• striking a plasma of the silicon-containing precursor;
• forming a layer of amorphous silicon on a semiconductor substrate, wherein the layer of amorphous silicon as-deposited is characterized by a first amount of hydrogen incorporation of less than or about 3 at. %;
• and
• performing an energy treatment on the layer of amorphous silicon, wherein the energy treatment reduces an amount of hydrogen from the layer of amorphous silicon to a second amount of hydrogen incorporation less than the first amount of hydrogen incorporation.