Nonvolatile memory device, storage device having the same, and operating method thereof

A nonvolatile memory device, comprising:

• an operational amplifier configured to compare a reference voltage with a voltage of a feedback node;
• a first feedback network circuit configured to generate a first output voltage by dividing an input voltage in response to an output voltage of the operational amplifier, to apply the first output voltage to a first set of wordlines, and to transmit a voltage corresponding to the first output voltage to the feedback node in response to a first feedback signal;
• a second feedback network circuit configured to generate a second output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, to apply the second output voltage to a second set of wordlines, and to transmit a voltage corresponding to the second output voltage to the feedback node in response to a second feedback signal;
• and
• a third feedback network circuit configured to generate a third output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, to apply the third output voltage to a third set of wordlines, and to transmit a voltage corresponding to the third output voltage to the feedback node in response to a third feedback signal.