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US 2023/0146773 A1Published application
GaAs Based Photodetectors Using Dilute Nitride for Operation in O-band and C-bands
AssigneeNanograss Solar LLC
InventorsBahram Nabet, Pouya Dianat, Michel Francois, Fabio Quaranta, Adriano Cola
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Abstract
Photodetectors are fabricated on GaAs substrate using dilute nitride technology for high speed-high-sensitivity operation for telecom and datacom applications for the wavelength ranges covering O-band (Original band: 1260 nm to 1360) to C-band (conventional band: 1530-1565 nm).
Claims24
A photodetector comprising:
- a GaAs substrate;
- a GaAs buffer layer on top of the substrate;
- a plurality of alternating Bragg layers of AlAs and AlGaAs on top of the buffer layer;
- and
- a plurality of XxGaAsYy layers on top of the alternating layers, wherein Xx and Yy is one of nothing, Al, In, N, and Sb.
2 more elements
A photodetector comprising:
- a substrate;
- a buffer layer on top of the substrate;
- a Bragg layer on top of the buffer layer;
- a first Delta doping layer on top of the Bragg layer;
- at least one layer on top of the first Delta doping layer;
- an absorption layer on top of the at least one layer;
- a second Delta layer on top of the absorption layer;
- a barrier layer on top of the second Delta layer;
- and
- a cap layer on top of the barrier layer.
7 more elements
Dependencies are inferred from the claim text.