Method and apparatus for forming silicon carbide-containing film
AssigneeTokyo Electron Limited
InventorsMakoto FUJIKAWA, Susumu YAMAUCHI
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Abstract
A method of forming a silicon carbide-containing film on a substrate, includes: heating the substrate; supplying a carbon precursor gas containing an organic compound having an unsaturated carbon bond to the heated substrate; supplying a silicon precursor gas containing a silicon compound to the heated substrate; laminating, on the substrate, a silicon carbide-containing layer to be turned into the silicon carbide-containing film by allowing the organic compound having the unsaturated carbon bond to thermally react with the silicon compound; and supplying plasma to the silicon carbide-containing layer.
Claims19
1-12. (canceled)
A method of forming a silicon carbide-containing film on a substrate, the method comprising:
- heating the substrate;
- supplying a carbon precursor gas containing an organic compound having an unsaturated carbon bond to the heated substrate;
- supplying a silicon precursor gas containing a silicon compound to the heated substrate;
- laminating, on the substrate, a silicon carbide-containing layer to be turned into the silicon carbide-containing film by allowing the organic compound having the unsaturated carbon bond to thermally react with the silicon compound;
- and
- supplying plasma to the silicon carbide-containing layer.
An apparatus for forming a silicon carbide-containing film on a substrate, comprising:
- a processing container configured to accommodate the substrate;
- a heater configured to heat the substrate accommodated in the processing container;
- a carbon precursor supplier configured to supply a carbon precursor gas containing an organic compound having an unsaturated carbon bond to the processing container;
- a silicon precursor supplier configured to supply a silicon precursor gas containing a silicon compound to the processing container;
- a plasma forming part configured to form plasma inside the processing container by exciting a gas for plasma;
- and
- a controller,
- wherein the controller is configured to execute steps of:
- heating the substrate accommodated in the processing container;
- supplying the carbon precursor gas containing the organic compound having the unsaturated carbon bond to the heated substrate inside the processing container;
- supplying the silicon precursor gas containing the silicon compound to the heated substrate inside the processing container;
- laminating, on the substrate, a silicon carbide-containing layer to be turned into the silicon carbide-containing film by allowing the organic compound having the unsaturated carbon bond to thermally react with the silicon compound;
- and
- forming the plasma inside the processing container and supplying the plasma to the silicon carbide-containing layer.
Dependencies are inferred from the claim text.