Quantum computing devices with an increased channel mobility

15-20. (canceled)

A topological quantum computing device comprising:

• a topologically active area formed in a substrate by selectively removing a portion of a superconducting metal layer formed over a semiconductor layer, wherein a removal of the portion of the superconducting metal layer exposes a portion of the semiconductor layer to form an exposed portion;
• and
• a gate, formed over the exposed portion of the semiconductor layer, wherein the gate comprises a gate dielectric formed over at least the exposed portion of the semiconductor layer, wherein the gate dielectric is formed after subjecting the substrate to a plasma treatment, wherein a set of parameters associated with the plasma treatment is selected to both increase channel mobility of a channel adjacent to the topologically active area and increase a density of electrons within the topologically active area, and wherein the plasma treatment further results in a formation of a clean semiconductor-dielectric interface between the topologically active area and a topologically inactive area of the topological quantum computing device.

A topological quantum computing device comprising:

• a quantum well formed in a substrate by selectively removing a portion of a superconducting metal layer formed over a semiconductor layer, wherein a removal of the portion of the superconducting metal layer exposes a portion of the semiconductor layer to form an exposed portion;
• and
• a gate, formed over the exposed portion of the semiconductor layer, wherein the gate comprises a gate dielectric formed over at least the exposed portion of the semiconductor layer, wherein the gate dielectric is formed after subjecting the substrate to a plasma treatment, wherein a set of parameters associated with the plasma treatment is selected to both increase channel mobility of a channel adjacent to the quantum well and increase a density of electrons within the quantum well, and wherein the plasma treatment further results in a formation of a clean semiconductor-dielectric interface between the quantum well and a topologically inactive area of the topological quantum computing device.