Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsHyuk Soon CHOI, Sang-Su PARK, Hee Sung SHIM, Dae Kun AHN, Min-Jun CHOI
Life of this patent
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Abstract
An image sensor is provided. The image sensor includes a substrate including a plurality of unit pixels, each of unit pixels includes a photoelectric conversion element; a first trench formed in the substrate in a lattice shape to isolate the plurality of unit pixels; a plurality of first capacitor structures extended along a sidewall of the first trench in the first trench, including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode; and a first capacitor isolation pattern at a lattice point of the first trench to isolate the plurality of first capacitor structures.
Claims20
An image sensor comprising:
- a substrate including a plurality of unit pixels, each of the plurality of unit pixels includes a photoelectric conversion element, the substrate defining a first trench in a lattice shape to isolate the plurality of unit pixels;
- a plurality of first capacitor structures extended along a sidewall of the first trench in the first trench, including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode;
- and
- a plurality of first capacitor isolation patterns at respective lattice points of the first trench to isolate the plurality of first capacitor structures.
An image sensor comprising:
- a substrate including a first unit pixel and a second unit pixel adjacent to the first unit pixel in a first direction, the substrate defining a first trench extended in a second direction inside the substrate to isolate the first unit pixel from the second unit pixel, including a first sidewall and a second sidewall, which are opposite to each other in the first direction;
- and
- a first capacitor structure including a first electrode extended along the first sidewall of the first trench, a second electrode extended along the second sidewall of the first trench, and a first dielectric layer between the first electrode and the second electrode.
An image sensor comprising:
- a substrate including a plurality of unit pixels, each of which includes a photoelectric conversion element, including a first surface and a second surface, which are opposite to each other, the first trench defining a first trench surrounding a periphery of each of the plurality of unit pixels inside the substrate and isolating the plurality of unit pixels;
- a first insulating layer on one sidewall of the first trench;
- a second insulating layer on the other sidewall of the first trench;
- a plurality of first capacitor structures filling the first trench between the first insulating layer and the second insulating layer, extended along an extended direction of the first trench, and including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode;
- a plurality of first capacitor isolation patterns at respective intersection points of the first trench to isolate the plurality of first capacitor structures;
- a wiring structure on the second surface of the substrate, including a first contact connected to the first electrode and a second contact connected to the second electrode;
- and
- a color filter and a micro lens, which are sequentially stacked on the first surface of the substrate.
Dependencies are inferred from the claim text.