Thin Film Transistor and Display Device Comprising the Same

A thin film transistor comprising:

• a first gate electrode and a second gate electrode which overlap each other, and are spaced apart from each other in a thickness direction of the thin film transistor;
• and
• an active layer disposed between the first gate electrode and the second gate electrode, the active layer comprising a first active layer and a second active layer,
• wherein the active layer includes:
• a channel portion;
• a first connection portion that is in contact with one side of the channel portion;
• and
• a second connection portion that is in contact with another side of the channel portion,
• wherein the channel portion includes a first channel portion and a second channel portion, which are disposed side-by-side in plan view, each of the first channel portion and the second channel portion extend from the first connection portion to the second connection portion,
• the first channel portion overlaps with the first gate electrode and with the second gate electrode,
• the second channel portion overlaps with the second gate electrode, and
• the second active layer is disposed in the first channel portion and the second channel portion, and
• the first active layer is made of a material having a mobility lower than a mobility of a material of the second active layer, and is not disposed in at least a portion of the second channel portion.