Memory with dqs pulse control circuitry, and associated systems, devices, and methods
AssigneeMicron Technology, Inc.
InventorsMijo Kim, Scott E. Smith, Si Hong Kim
Life of this patent
Estimating the term…
Loading patent…
AssigneeMicron Technology, Inc.
InventorsMijo Kim, Scott E. Smith, Si Hong Kim
Estimating the term…
Memory with DQS pulse control circuitry is disclosed herein. In one embodiment, a memory device comprises a DQS terminal and circuitry operably coupled to the DQS terminal. The DQS terminal is configured to receive an external DQS signal including a first pulse having a first width. In turn, the circuitry is configured to generate a second pulse based at least in part on the first pulse and output an internal DQS signal including the second pulse. The second pulse can have a second width greater than the first width. In some embodiments, the external DQS signal can further include a third pulse having a third width greater than the second width. In such embodiments, the circuitry can be further configured to generate and output a fourth pulse based at least in part on the third pulse that has a fourth width equivalent to the third width.
A memory device, comprising:
A memory system, comprising:
A circuit, comprising:
Dependencies are inferred from the claim text.