Interconnects formed using integrated damascene and subtractive etch processing
AssigneeInternational Business Machines Corporation
InventorsNicholas Anthony Lanzillo, Huai Huang, Hosadurga Shobha, Lawrence A. Clevenger
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Abstract
A semiconductor structure comprises two or more interconnect lines of a first width in a given interconnect level, and two or more interconnect lines of a second width in the given interconnect level. The two or more interconnect lines of the second width are disposed between a first one of the two or more interconnect lines of the first width and a second one of the two or more interconnect lines of the second width. The two or more interconnect lines of the first width have sidewalls with a negative taper angle. The two or more interconnect lines of the second width have sidewalls with a positive taper angle.
Claims20
A semiconductor structure comprising:
- two or more interconnect lines of a first width in a given interconnect level;
- and
- two or more interconnect lines of a second width in the given interconnect level;
- wherein the two or more interconnect lines of the second width are disposed between a first one of the two or more interconnect lines of the first width and a second one of the two or more interconnect lines of the second width;
- wherein the two or more interconnect lines of the first width have sidewalls with a negative taper angle;
- and
- wherein the two or more interconnect lines of the second width have sidewalls with a positive taper angle.
An integrated circuit, comprising:
- a back-end-of-line interconnect structure comprising two or more interconnect levels;
- wherein at least a given one of the two or more interconnect levels comprises:
- two or more interconnect lines of a first width;
- and
- two or more interconnect lines of a second width;
- wherein the two or more interconnect lines of the second width are disposed between a first one of the two or more interconnect lines of the first width and a second one of the two or more interconnect lines of the second width;
- wherein the two or more interconnect lines of the first width have sidewalls with a negative taper angle;
- and
- wherein the two or more interconnect lines of the second width have sidewalls with a positive taper angle.
A method comprising:
- forming two or more interconnect lines of a first width in a given interconnect level;
- and
- forming two or more interconnect lines of a second width in the given interconnect level;
- wherein the two or more interconnect lines of the second width are disposed between a first one of the two or more interconnect lines of the first width and a second one of the two or more interconnect lines of the second width;
- wherein the two or more interconnect lines of the first width have sidewalls with a negative taper angle;
- and
- wherein the two or more interconnect lines of the second width have sidewalls with a positive taper angle.
Dependencies are inferred from the claim text.