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US 2023/0146397 A1Published application
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorTakahiro MORI
Life of this patent
Estimating the term…
Abstract
In a LDMOSFET 100, an “STI structure 11” provided in a drain region including a high concentration drain region 10 and a drift region 12 including the high concentration drain region 10 has a slit region 11A extending in a x-direction, and in plan view, the “STI structure 11” is interposed between the slit region 11A and the high concentration drain region 10.
Claims10
A semiconductor device, comprising:
- a drain region;
- a source region provided away from the drain region;
- a channel region located between the drain region and the source region;
- a gate dielectric film provided on the channel region;
- a gate electrode provided on the gate dielectric film;
- and
- an isolation region provided in the drain region,
- wherein the drain region includes:
- a high concentration drain region;
- and
- a low concentration drain region including the high concentration drain region,
- wherein the isolation region has a slit region extending in a first direction in plan view, and
- wherein the isolation region is interposed between the slit region and the high concentration drain region in plan view.
10 more elements
A semiconductor device, comprising:
- a drain region;
- a source region provided away from the drain region;
- a channel region located between the drain region and the source region;
- a gate dielectric film provided on the channel region;
- a gate electrode provided on the gate dielectric film;
- and
- an isolation region provided in the drain region,
- wherein the drain region includes:
- a high concentration drain region;
- and
- a low concentration drain region including the high concentration drain region,
- wherein the isolation region has a slit region extending in a first direction in plan view, and
- wherein a connection region between a source region side end portion of a slit diffusion region exposed from the slit region and the low concentration drain region is exposed from the gate electrode in plan view.
10 more elements
Dependencies are inferred from the claim text.