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US 2023/0146375 A1Published application
Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsHiroki MURAKAMI, Masanobu MATSUNAGA, Yamato TONEGAWA
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Abstract
A substrate processing method of etching a SiN film formed on the substrate includes supplying a HF gas at a processing temperature of 450 degrees C. or higher to etch the SiN film.
Claims18
1-12:
- (canceled)
A substrate processing method of etching a SiN film formed on a substrate, the substrate processing method comprising:
- supplying a HF gas at a processing temperature of 450 degrees C. or higher to etch the SiN film.
Dependencies are inferred from the claim text.