Display apparatus including a thin-film transistor including a silicon semiconductor and a thin-film transistor including an oxide semiconductor

A display apparatus, comprising:

• a substrate comprising a display area and a non-display area, wherein the non-display area includes a pad portion outside the display area;
• a first thin-film transistor arranged in the display area, and comprising a first semiconductor layer including a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer;
• a first insulating layer covering the first gate electrode;
• a second thin-film transistor arranged on the first insulating layer, and comprising a second semiconductor layer including an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer;
• a second insulating layer covering the second gate electrode;
• a first voltage line extending in a first direction and arranged on the second insulating layer;
• a first wire extending in the first direction adjacent to the first voltage line;
• a first signal line extending in a second direction crossing the first wire, wherein the first signal line is arranged on the same layer as the first gate electrode;
• and
• a second wire overlapping the first signal line and extending in the second direction,
• wherein the first wire is connected to the second wire through a contact hole in the display area.