Semiconductor layer, method for manufacturing same, and transistor comprising same
AssigneeHansol Chemical Co., Ltd.
InventorsHyun-Kyung LEE, Jang-Hyeon SEOK, Jung-Woo PARK, Jin-Seong PARK, Tae Hyun HONG, Jiazhen SHENG, Minjung KIM
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Abstract
A method for manufacturing a semiconductor layer is provided. The method for manufacturing a semiconductor layer may include preparing a substrate, and conducting a first unit process of reacting a first precursor including indium (In) and a first reaction source and a second unit process of reacting a second precursor including gallium (Ga) and a second reaction source to form a semiconductor layer including the indium and the gallium on the substrate.
Claims14
A method for manufacturing a semiconductor layer, the method comprising:
- preparing a substrate;
- and
- conducting a first unit process of reacting a first precursor including indium (In) and a first reaction source and a second unit process of reacting a second precursor including gallium (Ga) and a second reaction source to form a semiconductor layer including the indium and the gallium on the substrate,
- wherein the first precursor and the second precursor have a ligand with the same chemical structure.
A transistor comprising:
- a substrate;
- a gate insulating film disposed on the substrate;
- an active layer disposed on the gate insulating film and including indium (In) and gallium (Ga);
- and
- a source electrode disposed on the gate insulating film so as to be in contact with one side of the active layer and a drain electrode disposed on the gate insulating film so as to be in contact with the other side of the active layer,
- wherein, in the active layer, a content of the indium is greater than 25.3 wt% and less than 33.5 wt% and a content of the gallium is greater than 6.8 wt% and less than 16.9 wt%.
A method for manufacturing a semiconductor layer, the method comprising:
- preparing a substrate;
- providing a precursor including indium on the substrate;
- providing a reaction source on the precursor-provided substrate to form a semiconductor layer, in which the precursor and the reaction source are reacted, at a first temperature;
- and
- heat treating the semiconductor layer at a second temperature,
- wherein the first temperature is controlled depending on a type of the reaction source.
Dependencies are inferred from the claim text.