Fet silicide and fabrication methods thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Hsun Wang, Chih-Chao Chou, Shih-Cheng Chen, Jung-Hung Chang, Jui-Chien Huang, Chun-Hsiung Lin, Chih-Hao Wang
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Abstract
The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.
Claims20
A semiconductor device, comprising:
- a semiconductor fin disposed over a substrate;
- an isolation structure at least partially surrounding the semiconductor fin;
- a source/drain (S/D) feature disposed over the semiconductor fin, wherein an extended portion of the S/D feature extends over the isolation structure, the extended portion includes a first, a second, and a third epitaxial layer, the second epitaxial layer being embedded between the first and third epitaxial layers;
- and
- a silicide layer disposed over the S/D feature, wherein the silicide layer wraps around the extended portion of the S/D feature such that the silicide layer is disposed along bottom and side surfaces of the first epitaxial layer.
A semiconductor device, comprising:
- a semiconductor fin protruding from a substrate;
- a shallow trench isolation (STI) structure adjacent a sidewall of the semiconductor fin;
- an epitaxial source/drain (S/D) feature over the semiconductor fin, the epitaxial S/D feature having an extended portion directly above the STI structure;
- a silicide layer over the epitaxial S/D feature, the silicide layer fully wrapping around the extended portion of the epitaxial S/D feature;
- and
- a spacer layer wrapping around the silicide layer, wherein a portion of the spacer layer is disposed between the STI structure and the silicide layer.
A semiconductor device, comprising:
- a first and a second semiconductor fin protruding from a substrate;
- an isolation feature over the substrate and over side surfaces of the first and second semiconductor fins;
- a first and a second source/drain (S/D) feature over each of the respective first and second semiconductor fins, wherein the first and second S/D features have extended portions that extend directly above the isolation feature;
- and
- a first and a second silicide layer over each of the respective first and second S/D features, wherein each of the first and second silicide layers fully wraps around the extended portions of each of the first and second S/D features,
- wherein each of the extended portions of the first and second S/D features includes a plurality of epitaxial layers having different dopant concentrations.
Dependencies are inferred from the claim text.