Method for on-silicon integration of a component iii-v and on-silicon integrated component iii-v

A method for on-silicon integration of a III-V-based material component comprising:

• providing a first substrate comprising a silicon-based optical layer, said optical layer comprising at least one waveguide,
• transferring a second III-V-based material substrate on the optical layer,
• forming the component from the second substrate, in a proximity of the waveguide so as to enable a coupling between the waveguide and the component, by preserving a III-V-based material layer extending laterally from the component,
• forming by epitaxy from the III-V-based material layer an InP:Fe-based structure laterally bordering the component,
• forming a layer comprising contacts configured to electrically contact the component, on a face of the component opposite the optical layer, and
• transferring a third silicon-based substrate on the layer comprising the contacts.