Semiconductor device

A method for forming a semiconductor device, the method comprising:

• forming a plurality of transistor cells in a semiconductor body, the semiconductor body comprising a first surface, a second surface opposite to the first surface in a vertical direction, an active region, and a sensor region arranged adjacent to the active region in a horizontal direction, wherein the plurality of transistor cells is at least partly integrated in the active region, wherein each transistor cell comprises a source region, a body region, a drift region separated from the source region by the body region, and a gate electrode dielectrically insulated from the body region;
• forming at least one sensor cell, wherein the at least one sensor cell is at least partly integrated in the sensor region, wherein each of the at least one sensor cell comprises a source region, a body region, a drift region separated from the source region by the body region, and a gate electrode dielectrically insulated from the body region;
• and
• forming an intermediate region between the active region and the sensor region, the intermediate region comprising a drift region and an undoped semiconductor region extending from the first surface into the drift region.