Display panel and display apparatus
AssigneeXiamen Tianma Micro-Electronics Co., Ltd.
InventorsJieliang LI, Jiaxian LIU
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Abstract
Provided are a display panel and a display apparatus. The display panel includes a driving array layer having functional layers and insulation layers. The driving array layer includes a first transistor, a second transistor, a first capacitor including a first plate and a second plate, and a second capacitor including a third plate and a fourth plate. An active layer of the first transistor contains silicon, and an active layer of the second transistor contains oxide semiconductor. The first plate and the second plate are located in two of the functional layers, respectively, and the third plate and the fourth plate are located in two of the functional layers, respectively.
Claims20
A display panel, comprising:
- a base substrate;
- and
- a driving array layer disposed on a side of the base substrate and having functional layers and insulation layers,
- wherein the driving array layer comprises:
- a first transistor, wherein the first transistor comprises a first active layer comprising silicon;
- a second transistor, wherein the second transistor comprises a second active layer comprising oxide semiconductor;
- a first capacitor comprising a first plate and a second plate;
- and
- a second capacitor comprising a third plate and a fourth plate,
- wherein a first insulation layer is provided bewteen the first plate and the second plate, and a second insulation layer is provided between the third plate and the fourth plate;
- and the first insulation layer has a lower oxygen content than the second insulation layer.
A display apparatus, comprising:
- a display panel, comprising a base substrate and a driving array layer, the driving array layer being disposed on a side of the base substrate and having functional layers and insulation layers,
- wherein the driving array layer comprises:
- a first transistor, wherein the first transistor comprises a first active layer comprising silicon;
- a second transistor, wherein the second transistor comprises a second active layer comprising oxide semiconductor;
- a first capacitor comprising a first plate and a second plate;
- and
- a second capacitor comprising a third plate and a fourth plate,
- wherein a first insulation layer is provided between the first plate and the second plate, and a second insulation layer is provided between the third plate and the fourth plate;
- and the first insulation layer has a lower oxygen content than the second insulation layer.
Dependencies are inferred from the claim text.