Semiconductor device

A semiconductor device, comprising:

• a plurality of fin-shaped patterns extending in a first direction on a substrate;
• a field insulating layer covering sidewalls of the plurality of fin-shaped patterns and disposed between the fin-shaped patterns;
• a plurality of gate structures extending in a second direction on the field insulating layer, each of the gate structures comprising a gate spacer;
• a source/drain pattern in contact with the gate spacer between the gate structures adjacent to each other in the first direction and connected to the plurality of fin-shaped patterns, the source/drain pattern comprising bottom surfaces respectively connected to the fin-shaped patterns, and at least one connection surface connecting the bottom surfaces to each other;
• and
• a sealing insulating pattern extending along an upper surface of the field insulating layer and a sidewall of the gate structure,
• wherein the source/drain pattern comprises first portions and second portions, the second portion of the source/drain pattern being disposed between the first portions of the source/drain pattern,
• in the first portion of the source/drain pattern, the source/drain pattern has a first width in the first direction, and
• in the second portion of the source/drain pattern, a width of the source/drain pattern in the first direction decreases from the first width to a second width and then increases to the first width.

A semiconductor device, comprising:

• a plurality of first fin-shaped patterns disposed in a first region of a substrate and spaced apart from each other in a first direction;
• a plurality of second fin-shaped patterns disposed in a second region of the substrate and spaced apart from each other in a second direction;
• a first field insulating layer covering sidewalls of the plurality of first fin-shaped patterns and disposed between the first fin-shaped patterns;
• a second field insulating layer covering sidewalls of the plurality of second fin-shaped patterns and disposed between the second fin-shaped patterns;
• a first source/drain pattern connected to the plurality of first fin-shaped patterns on the first field insulating layer, the first source/drain pattern comprising first bottom surfaces respectively connected to the first fin-shaped patterns, at least one first connection surface connecting the first bottom surfaces to each other, and a first outer sidewall extending from the first bottom surface;
• a second source/drain pattern connected to the plurality of second fin-shaped patterns on the second field insulating layer, the second source/drain pattern comprising second bottom surfaces respectively connected to the second fin-shaped patterns, at least one second connection surface connecting the second bottom surfaces to each other, and a second outer sidewall extending from the second bottom surface;
• a first sealing insulating pattern extending along the first connection surface of the first source/drain pattern, an upper surface of the first field insulating layer, and the first outer sidewall of the first source/drain pattern;
• and
• a second sealing insulating pattern extending along the second outer sidewall of the second source/drain pattern,
• wherein the second sealing insulating pattern is not disposed on the second connection surface of the second source/drain pattern and an upper surface of the second field insulating layer.