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US 2023/0145240 A1Published application
Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
AssigneeASM IP Holding B.V.
InventorsJohn Tolle, Joe Margetis, David Kohen
Life of this patent
Estimating the term…
Abstract
A method for forming a doped layer is disclosed. The doped layer may be used in a NMOS or a silicon germanium application. The doped layer may be created using an n-type halide species in a n-type dopant application, for example.
Claims20
An apparatus for forming a device, comprising:
- a reaction chamber;
- a first gas source configured to provide a first gas to the reaction chamber;
- a second gas source configured to provide a second gas to the reaction chamber;
- a susceptor configured to hold a semiconductor substrate;
- and
- a controller configured to perform operations, including:
- cleaning a device on the semiconductor substrate of any oxides, the semiconductor substrate being disposed on the susceptor in the reaction chamber;
- stabilizing a temperature of the reaction chamber;
- flowing a halide precursor onto the device, the halide precursor comprising at least one of:
- hydrogen fluoride (HF);
- hydrogen chloride (HCl);
- hydrogen bromide (HBr);
- hydrogen iodide (HI);
- chlorine (Cl2);
- fluorine (F2);
- bromine (Br2);
- or iodine (I2);
- flowing a silicon precursor onto the device, the silicon precursor comprising at least one of:
- silane (SiH4);
- dichlorosilane (DCS);
- disilane;
- or trisilane;
- and
- flowing a dopant precursor onto the device, the dopant precursor comprising at least one of:
- PCl3;
- PCl5;
- PBr3;
- PBr5;
- PI3;
- PI5;
- AsCl3;
- AsCl5;
- AsBr3;
- AsBr5;
- AsI3;
- AsI5;
- SbCl3;
- SbCl5;
- SbBr3;
- SbBr5;
- SbI3;
- SbI5;
- arsine (AsH3);
- or phosphine (PH3);
- wherein the halide precursor prevents deposition onto a dielectric layer disposed on the semiconductor substrate;
- wherein the silicon precursor and the dopant precursor react to form a contact layer, wherein the contact layer comprises silicon phosphine (SiP);
- silicon arsenide (SiAs);
- silicon antimonide (SiSb), or combinations thereof;
- and
- wherein any of the flowing operations are repeated to form a desired thickness of the contact layer.
47 more elements
An apparatus for forming a device, comprising:
- a reaction chamber;
- a first gas source configured to provide a first gas to the reaction chamber;
- a second gas source configured to provide a second gas to the reaction chamber;
- a susceptor configured to hold a semiconductor substrate;
- and
- a controller configured to perform operations, including:
- cleaning a device on the semiconductor substrate of any oxides, the semiconductor substrate being disposed on the susceptor in the reaction chamber;
- stabilizing a temperature of the reaction chamber;
- flowing a halide precursor onto the device, the halide precursor comprising at least one of:
- hydrogen fluoride (HF);
- hydrogen chloride (HCl);
- hydrogen bromide (HBr);
- hydrogen iodide (HI);
- chlorine (Cl2);
- fluorine (F2);
- bromine (Br2);
- or iodine (I2);
- flowing a silicon precursor onto the device, the silicon precursor comprising at least one of:
- silane (SiH4);
- dichlorosilane (DCS);
- disilane;
- or trisilane;
- and
- flowing a dopant precursor onto the device, the dopant precursor comprising at least one of:
- PCl3;
- PCl5;
- PBr3;
- PBr5;
- PI3;
- PI5;
- AsCl3;
- AsCl5;
- AsBr3;
- AsBr5;
- AsI3;
- AsI5;
- SbCl3;
- SbCl5;
- SbBr3;
- SbBr5;
- SbI3;
- SbI5;
- arsine (AsH3);
- or phosphine (PH3);
- wherein the halide precursor prevents deposition onto a dielectric layer disposed on the semiconductor substrate;
- wherein the silicon precursor and the dopant precursor react to form a contact layer, wherein the contact layer comprises silicon phosphine (SiP);
- silicon arsenide (SiAs);
- silicon antimonide (SiSb), or combinations thereof.
45 more elements
An apparatus for forming a device, comprising:
- a reaction chamber;
- a first gas source configured to provide a first gas to the reaction chamber;
- a second gas source configured to provide a second gas to the reaction chamber;
- a susceptor configured to hold a semiconductor substrate on which a device is formed;
- and
- a controller configured to perform operations, including:
- flowing a halide precursor onto the device, the halide precursor comprising at least one of:
- hydrogen fluoride (HF);
- hydrogen chloride (HCl);
- hydrogen bromide (HBr);
- hydrogen iodide (HI);
- chlorine (Cl2);
- fluorine (F2);
- bromine (Br2);
- or iodine (I2);
- flowing a silicon precursor onto the device, the silicon precursor comprising at least one of:
- silane (SiH4);
- dichlorosilane (DCS);
- disilane;
- or trisilane;
- and
- flowing a dopant precursor onto the device, the dopant precursor comprising at least one of:
- PCl3;
- PCl5;
- PBr3;
- PBr5;
- PI3;
- PI5;
- AsCl3;
- AsCl5;
- AsBr3;
- AsBr5;
- AsI3;
- AsI5;
- SbCl3;
- SbCl5;
- SbBr3;
- SbBr5;
- SbI3;
- SbI5;
- arsine (AsH3);
- or phosphine (PH3);
- wherein the halide precursor prevents deposition onto a dielectric layer disposed on the semiconductor substrate;
- wherein the silicon precursor and the dopant precursor react to form a contact layer, wherein the contact layer comprises silicon phosphine (SiP);
- silicon arsenide (SiAs);
- silicon antimonide (SiSb), or combinations thereof.
43 more elements
Dependencies are inferred from the claim text.