Semiconductor device

A semiconductor device comprising:

• a first semiconductor element comprising a first face and a second face opposite to the first face, wherein a first electrode is provided in the first face and a second electrode is provided in the second face;
• a second semiconductor element comprising a third face and a fourth face opposite to the third face, wherein a third electrode is provided in the third face and a fourth electrode is provided in the fourth face;
• a first insulating base member comprising a fifth face adhesively bonded to the first face of the first semiconductor element, and a sixth face opposite to the fifth face;
• a first wiring that penetrates through the first insulating base member to be electrically connected to the first electrode, and that is disposed on the sixth face of the first insulating base member;
• a second insulating base member comprising a seventh face adhesively bonded to the third face of the second semiconductor element, and an eighth face opposite to the seventh face;
• a second wiring that penetrates through the second insulating base member to be electrically connected to the third electrode, and that is disposed on the eighth face of the second insulating base member;
• a first wiring member that is electrically connected to the second electrode of the first semiconductor element;
• a second wiring member that faces the sixth face of the first insulating base member, and that is electrically connected to the first wiring and the fourth electrode of the second semiconductor element;
• and
• a third wiring member that faces the eighth face of the second insulating base member, and that is electrically connected to the second wiring,
• wherein:
• the first wiring member and the third wiring member face each other, and are electrically connected to each other;
• and
• a current flows in a first direction in the first wiring member, and flows in a second direction opposite to the first direction in the third wiring member.