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US 2023/0144840 A1Published application
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsHideki SASAKI, Tatsuaki TSUKUDA, Hiroya SHIMOYAMA
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Abstract
A semiconductor device includes a semiconductor chip hazing a non-overlapping region in which a source pad for main transistor and a clip do not overlap with each other. At this time, a sense transistor is arranged in a region of the non-overlapping region, which is located between a first portion of the clip and a first short side of the source pad for main transistor in a plan view.
Claims11
A semiconductor device comprising:
- a die pad;
- a semiconductor chip mounted on the die pad;
- a lead arranged separately from the die pad;
- and
- a plate-shaped member electrically connecting the semiconductor chip and the lead to each other,
- wherein the semiconductor chip includes:
- a power transistor;
- and
- a sense transistor for detecting a current flowing through the power transistor,
- wherein a first electrode electrically connected to the power transistor and a second electrode electrically connected to the sense transistor are formed on a surface of the semiconductor chip,
- wherein the first electrode has:
- in a plan view,
- a first short side;
- a second short side facing the first short side;
- a first long side intersecting the first short side;
- and
- a second long side facing the first long side,
- wherein the semiconductor chip has:
- in the plan view,
- an overlapping region in which the first electrode and the plate-shaped member overlap with each other;
- and
- a non-overlapping region in which the first electrode and the plate-shaped member do not overlap with each other,
- wherein the plate-shaped member extends in a first direction in which the first long side extends so as to cross the second short side in the plan view, is electrically connected to the first electrode via a first conductive member, and is electrically connected to the lead via a second conductive member,
- wherein the plate-shaped member includes:
- a first portion with which the first conductive member is in contact;
- a second portion with which the second conductive member is in contact;
- and
- a third portion located between the first portion and the second portion, and
- wherein the sense transistor is arranged in a first region of the non-overlapping region, the first region being located between the first portion of the plate-shaped member and the first short side of the first electrode in the plan view.
26 more elements
A semiconductor device comprising:
- a die pad;
- a semiconductor chip mounted on the die pad;
- a lead arranged separately from the die pad;
- and
- a plate-shaped member electrically connecting the semiconductor chip and the lead to each other,
- wherein the semiconductor chip includes:
- a power transistor;
- and
- a sense transistor for detecting a current flowing through the power transistor,
- wherein a first electrode electrically connected to the power transistor and a second electrode electrically connected to the sense transistor are formed on a surface of the semiconductor chip,
- wherein the first electrode has:
- in the plan view,
- a first short side;
- a second short side facing the first short side;
- a first long side intersecting the first short side;
- and
- a second long side facing the first long side,
- wherein the semiconductor chip has:
- in a plan view,
- an overlapping region in which the first electrode and the plate-shaped member overlap with each other;
- and
- a non-overlapping region in which the first electrode and the plate-shaped member do not overlap with each other,
- wherein the plate-shaped member extends in a first direction in which the first long side extends so as to cross the second short side in the plan view, is electrically connected to the first electrode via a first conductive member, and is electrically connected to the lead via a second conductive member,
- wherein the plate-shaped member includes:
- a first portion with which the first conductive member is in contact;
- a second portion with which the second conductive member is in contact;
- and
- a third portion located between the first portion and the second portion, and
- wherein the sense transistor is arranged in a first region of the overlapping region, the first region overlapping with the third portion of the plate-shaped member in the plan view.
26 more elements
Dependencies are inferred from the claim text.