Back to results
US 2023/0144657 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorChih-Tung Yeh
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a III-V compound semiconductor layer and a source/drain structure. The source/drain structure is disposed on the III-V compound semiconductor layer. The source/drain structure includes a metal layer and metal silicide patterns. The metal layer is disposed on the metal silicide patterns, and a portion of the metal layer is disposed between the metal silicide patterns adjacent to each other.
Claims20
A semiconductor device, comprising:
- a III-V compound semiconductor layer;
- and
- a source/drain structure disposed on the III-V compound semiconductor layer, wherein the source/drain structure comprises:
- metal silicide patterns;
- and
- a metal layer disposed on the metal silicide patterns, wherein a portion of the metal layer is disposed between the metal silicide patterns adjacent to each other.
3 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a source/drain structure on a III-V compound semiconductor layer, wherein the source/drain structure comprises:
- metal silicide patterns;
- and
- a metal layer disposed on the metal silicide patterns, wherein a portion of the metal layer is disposed between the metal silicide patterns adjacent to each other.
1 more element
Dependencies are inferred from the claim text.