Method for determining an etch profile of a layer of a wafer for a simulation system

A method comprising:

• calibrating an etch model using experimental cross-section profile information from a layer of a physical wafer generated based on a corresponding etch process;
• predicting an etch depth profile of a layer of a modeled wafer based on the calibrated etch model;
• and
• using the predicted etch depth profile to generate or enhance a metrology target design.

A method comprising:

• calibrating an etch model for optical proximity correction applications using any combination selected from:
• cross-section profile, scanning electron microscope, and scatterometry measurements from a layer of a wafer generated based on a corresponding etch process;
• predicting an etch parameter of a layer of a modeled wafer based on the calibrated etch model;
• and
• using the predicted etch parameter to correct a photomask, verify a post-etch process window, or co-optimize a lithography illumination and photomask.

A method comprising:

• calibrating an etch model for predicting a cross-wafer etch fingerprint as input for wafer inspection or patterning control operations and having parameters that describe cross wafer variations of a corresponding etch process, using any combination selected from:
• a cross-wafer cross-section profile, scanning electron microscope, and scatterometry measurements from a layer of a wafer generated based on the etch process;
• predicting an etch parameter of a layer of a modeled wafer based on the calibrated etch model;
• and
• using the predicted etch parameter as input for defect prediction of an inspection system, or to a pattern fidelity control system to improve across wafer patterning performance.