Loading patent…
AssigneeXiamen Industrial Technology Research Institue Co.,Ltd.
InventorsYu LIU, Tingying SHEN, SZU-CHUN KANG, Taiwei CHIU, Danyun WANG, Lijun SHAN
Estimating the term…
The present disclosure discloses a method for manufacturing a resistive switching element, including: performing an etching process, a deposition process and a polishing process alternately to prepare the bottom electrode, the resistive switching layer and the top electrode; and optimizing at least one of the bottom electrode, the resistive switching materials and the oxygen storage layer by using the sidewall process when preparing the bottom electrode and the resistive switching materials, so as to reduce a contact area between the bottom electrode and the resistive switching materials, and/or reduce a contact area between the resistive switching materials and the oxygen storage layer. The method could form conductive filaments in the resistive switching layer, and a low resistive state and high resistive state are realized by forming and breaking conductive filaments. The present disclosure further discloses a resistive switching element and a resistive switching memory having the resistive switching element.
A method for manufacturing a resistive switching element, wherein the resistive switching element comprises a bottom electrode, a top electrode and a resistive switching layer disposed between the bottom electrode and the top electrode, the resistive switching layer comprising an oxygen storage layer adjacent to the top electrode and resistive switching materials adjacent to the bottom electrode, the method comprising steps of:
Dependencies are inferred from the claim text.