Semiconductor structure

Abstract

The present disclosure provides a semiconductor structure including a substrate, a first gate structure, and a second gate structure. The substrate includes at least one first trench group and at least one second trench group spaced apart from each other. The first trench group includes first trenches spaced apart from each other in a first direction and extending in a second direction other than the first direction. The second trench group includes second trenches spaced apart from each other in the second direction and extending in the first direction. The first gate structure is disposed in each of the first trenches and extends in the second direction. The second gate structure is disposed in each of the second trenches and extends in the first direction.

Dependencies are inferred from the claim text.