Semiconductor Device and Method of Manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Chang Ku, Hung-Chi Li, Tsung-Shu Lin, Tsung-Yu Chen, Wensen Hung
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Abstract
A semiconductor device includes a vapor chamber lid for high power applications such as chip-on-wafer-on-substrate (CoWoS) applications using high performance processors (e.g., graphics processing unit (GPU)) and methods of manufacturing the same. The vapor chamber lid provides a thermal solution which enhances the thermal performance of a package with multiple chips. The vapor chamber lid improves hot spot dissipation in high performance chips, for example, at the three-dimensional (3D-IC) packaging level.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- placing a vapor chamber lid over a semiconductor device and a substrate;
- and
- placing a thermally conductive ring on the substrate, wherein the placing the vapor chamber lid further comprises arranging at least part of the vapor chamber lid over the thermally conductive ring, overlying portions facing and being separated from uppermost surfaces of the thermally conductive ring by a gap.
A method of manufacturing a semiconductor device, the method comprising:
- bonding a first semiconductor die and a second semiconductor die to an interposer;
- bonding the interposer to a substrate;
- placing a ring on the substrate;
- and
- placing a vapor chamber heat spreader over the first semiconductor die, the second semiconductor die, and the ring, wherein a gap is located between the ring and the vapor chamber heat spreader.
A method of manufacturing a semiconductor device, the method comprising:
- bonding a three dimensional multi-die package to a substrate;
- placing a ring onto the substrate;
- placing a vapor chamber cap in thermal connection with the three dimensional multi-die package, wherein after the placing the vapor chamber cap a region located directly between a surface of the ring facing the vapor chamber cap and the vapor chamber cap is free from material;
- and
- placing a heat sink over the vapor chamber cap.
Dependencies are inferred from the claim text.