Phase change memory with encapsulated phase change element
AssigneeInternational Business Machines Corporation
InventorsDexin Kong, Kangguo Cheng, Juntao Li, Zheng Xu
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Abstract
Semiconductor devices and methods for forming the semiconductor devices are described. An example semiconductor structure can include a substrate including a first electrode. The example semiconductor structure can further include a heater element directly contacting the first electrode in the substrate. The example semiconductor structure a phase change cell directly on the heater element. The sidewalls of the phase change cell can be encapsulated with a spacer. The example semiconductor structure a second electrode directly on the phase change cell and the spacer.
Claims20
A semiconductor structure comprising:
- a substrate including a first electrode;
- a heater element directly contacting the first electrode in the substrate;
- a phase change cell directly on the heater element, wherein sidewalls of the phase change cell is encapsulated with a spacer;
- and
- a second electrode directly on the phase change cell and the spacer.
A method for forming a phase change memory element, the method comprising:
- depositing a phase change material layer directly on a heater element in a first substrate, wherein the heater element is directly on a first electrode of a second substrate;
- depositing a hard mask directly on the phase change material layer;
- forming a phase change structure using the hard mask;
- etching the phase change structure to form a phase change cell, wherein the etching of the phase change structure causes the hard mask to overhang on the phase change cell;
- forming a spacer to encapsulate the phase change cell;
- and
- depositing a second electrode on the hard mask.
A memory array comprising:
- a first decoder;
- a second decoder;
- a plurality of phase change memory cells;
- a plurality of bit lines connecting the plurality of phase change memory cells to the first decoder;
- a plurality of word lines connecting the plurality of phase change memory cells to the second decoder;
- wherein each phase change memory cell among the plurality of phase change memory cells comprises:
- a substrate including a first electrode;
- a heater element directly contacting the first electrode in the substrate;
- a phase change cell directly on the heater element, wherein sidewalls of the phase change cell is encapsulated with a spacer;
- and
- a second electrode directly on the phase change cell and the spacer.
Dependencies are inferred from the claim text.