Epitaxy structure including a plurality of semiconductor devices

An epitaxy structure comprising:

• a substrate having an upper surface that has a single crystal structure;
• an insulating layer disposed on the upper surface of the substrate;
• a plurality of two-dimensional material layers disposed on the upper surface of the substrate, the plurality of two-dimensional material layers being electrically isolated from each other by the insulating layer;
• and
• a plurality of semiconductor devices respectively disposed on the plurality of two-dimensional material layers.

A monolithic optical integrated circuit comprising

• an epitaxy structure comprising:
• a substrate having an upper surface that has a single crystal structure;
• an insulating layer disposed on the upper surface of the substrate;
• a plurality of two-dimensional material layers disposed on the upper surface of the substrate, the plurality of two-dimensional material layers being electrically isolated from each other by the insulating layer;
• and
• a plurality of semiconductor devices respectively disposed on the plurality of two-dimensional material layers,
• wherein the plurality of semiconductor devices comprise one of a light source, a photodetector, an optical modulator, and an optical amplifier.