Semiconductor device and manufacturing method of semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTakeyoshi NISHIMURA
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Abstract
A semiconductor device includes a temperature sensing unit including a plurality of temperature sensing diode portions each including an anode portion provided above a front surface of a semiconductor substrate and a cathode portion coupled to the anode portion and connected in series and a resistance portion of an N type electrically connected to the temperature sensing diode portion. A sum of resistance values of the cathode portion and the resistance portion is greater than a resistance value of the anode portion.
Claims20
A semiconductor device comprising:
- a temperature sensing unit provided above a front surface of a semiconductor substrate, wherein
- the temperature sensing unit includes a temperature sensing diode portion and a resistance portion of an N type electrically connected to the temperature sensing diode portion,
- the temperature sensing diode portion includes an anode portion and a cathode portion coupled to the anode portion,
- a plurality of the temperature sensing diode portions is connected in series, and
- a sum of resistance values of the cathode portion and the resistance portion is greater than a resistance value of the anode portion.
A manufacturing method of a semiconductor device comprising:
- forming, above a front surface of a semiconductor substrate, a temperature sensing unit including a plurality of temperature sensing diode portions and a resistance portion of an N type, the plurality of temperature sensing diode portions being connected in series and each including an anode portion and a cathode portion coupled to the anode portion, the resistance portion being electrically connected to the plurality of temperature sensing diode portions, wherein
- a sum of resistance values of the cathode portion and the resistance portion is greater than a resistance value of the anode portion.
Dependencies are inferred from the claim text.