Semiconductor device and image sensor including the semiconductor device

A semiconductor device comprising:

• a substrate extended in first and second directions crossing each other;
• a gate structure disposed on the substrate, including first and second sides extended in parallel with the first direction and spaced apart from each other in the second direction;
• and
• a source/drain area disposed in the substrate to overlap at least one of the first or second sides of the gate structure in a third direction perpendicular to the first and second directions, and having first conductive type impurities,
• wherein the source/drain area includes a plurality of source areas and at least one drain area spaced apart from each of the plurality of source areas.

An image sensor comprising:

• a gate structure to which a voltage according to charges accumulated by a light sensing element is applied, the gate structure including first and second sides extended in parallel with a first direction and spaced apart from each other in a second direction crossing the first direction, and a third side extended in parallel with the second direction;
• and
• a source follower transistor including a plurality of source/drain areas of a first conductive type,
• wherein the plurality of source/drain areas include first and second source/drain areas spaced apart from each other in the second direction and a third source/drain area spaced apart from at least one of the first or second source/drain area in the first direction,
• wherein the first and second source/drain areas overlap the first and second sides in a third direction perpendicular to the first and second directions, respectively,
• wherein the third source/drain area overlaps one of the first side or the third side in the third direction, and
• wherein a voltage applied to the first and second source/drain areas and a voltage applied to the third source/drain area operate based on their respective values different from each other.