EUV Active Films for EUV Lithography

A method of processing a substrate in a plasma processing chamber, the method comprising:

• exposing the substrate in the plasma processing chamber to a first vapor comprising a EUV metal precursor;
• exposing the substrate in the plasma processing chamber to a second vapor comprising an alcohol having a hydrogen in a β-position relative to oxygen;
• forming a photoresist film comprising a EUV metal alkoxide over the substrate by exposing the substrate in the plasma processing chamber to a third vapor comprising an oxidant;
• and
• patterning the photoresist film with EUV lithography.

A method of extreme ultraviolet (EUV) lithography, the method comprising:

• forming a EUV-active photoresist layer over a substrate, the EUV-active photoresist layer comprising a network of tin oxide terminated with alkoxy groups;
• exposing the substrate to a EUV irradiation having passed through an optical mask that comprises patterns to form exposed regions of the EUV-active photoresist layer, one or more alkoxy groups in the exposed regions undergoing β-hydrogen elimination to form a tin hydroxide by eliminating an alkene;
• and
• developing the EUV-active photoresist layer.