Semiconductor device

A semiconductor device comprising:

• a semiconductor layer group including a first nitride semiconductor layer and a second nitride semiconductor layer laminated in a first direction;
• a plurality of gate electrodes, each of which being in contact with the second nitride semiconductor layer in a second direction different from the first direction and is arranged along the second direction;
• a conductor electrically connecting the plurality of gate electrodes and located away from the semiconductor layer group;
• a source electrode opposite to the plurality of gate electrodes in a third direction different from both the first direction and the second direction and conducting with the first nitride semiconductor layer;
• a drain electrode opposite to the source electrode via the plurality of gate electrodes in the third direction and conducting with the first nitride semiconductor layer;
• and
• a first layer located between the plurality of gate electrodes and the drain electrode in the third direction and in contact with the plurality of gate electrodes, and in contact with the second nitride semiconductor layer in the second direction, wherein
• the first nitride semiconductor layer and the second nitride semiconductor layer form a heterojunction, and a two-dimensional carrier gas is induced in the first nitride semiconductor layer,
• the first nitride semiconductor layer and the second nitride semiconductor layer form a Schottky junction with each of the plurality of gate electrodes, and
• the first layer is any of an insulator, an intrinsic semiconductor, and a semiconductor having a conductivity type opposite to that of the second nitride semiconductor layer, and suppresses induction of the two-dimensional carrier gas in the first nitride semiconductor layer opposite to the first layer in the first direction.