Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
AssigneeASM IP Holding B.V.
InventorsAurélie Kuroda, Atsuki Fukazawa
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Abstract
Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process are provided. The methods may include: forming a topographically selective silicon oxide film by a plasma enhanced atomic layer deposition (PEALD) process or a cyclical plasma-enhanced chemical vapor deposition (cyclical PECVD) process. The methods may also include: forming a silicon oxide film either selectivity over the horizontal surfaces of a non-planar substrate or selectively over the vertical surfaces of a non-planar substrate.
Claims23
A method for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process, the method comprising:
- providing a non-planar substrate including one or more horizontal surfaces and one or more vertical surfaces into a reaction chamber;
- contacting the non-planar substrate with a vapor phase reactant comprising a silicon component, a carbon component, and a hydrogen component;
- contacting the non-planar substrate with a reactive species generated from a plasma produced from a gas comprising an oxygen precursor and a noble gas;
- and
- forming a silicon oxide film either selectively over the horizontal surfaces of the non-planar substrate or selectively over the vertical surfaces of the non-planar substrate.
Dependencies are inferred from the claim text.