Semiconductor device and method of manufacturing the semiconductor device

A semiconductor device, comprising:

• an active fin protruding from a substrate and extending in a first direction;
• a device isolation layer defining the active fin in the substrate and covering a portion of a side surface of the active fin;
• a plurality of gate structures intersecting the active fin and extending in a second direction, perpendicular to the first direction;
• a first epitaxial layer disposed on a first recess region of the active fin that is outside of a first gate structure, among the plurality of gate structures;
• a second epitaxial layer disposed on a second recess region of the active fin that is outside of a second gate structure, among the plurality of gate structures;
• and
• one or more third epitaxial layers disposed on one or more third recess regions on the active fin, between the first gate structure and the second gate structure,
• wherein each of the plurality of gate structures includes a gate and gate spacers disposed on side surfaces of the gate,
• wherein, among the gate spacers, a first gate spacer in contact with the first epitaxial layer includes a first region extending in a third direction, perpendicular to an upper surface of the substrate, and a second region bent from a lower portion of the first region and extending toward the first epitaxial layer, and
• wherein, a length of the first epitaxial layer in the first direction is shorter than a length of the one or more third epitaxial layers in the first direction.

A semiconductor device, comprising:

• an active fin protruding from a substrate and extending in a first direction;
• a device isolation layer defining the active fin in the substrate and covering a portion of a side surface of the active fin;
• a first gate structure intersecting the active fin and extending in a second direction, perpendicular to the first direction;
• a first dummy gate structure extending in the second direction and disposed adjacent to the first gate structure;
• and
• a first epitaxial layer disposed on a first recess region of the active fin, between the first gate structure and the first dummy gate structure,
• wherein the first gate structure includes a first gate, and a first gate spacer disposed on one side surface adjacent to the first dummy gate structure, among side surfaces of the first gate,
• wherein the first gate spacer includes a first region extending in a third direction, perpendicular to an upper surface of the substrate, and a second region extending from a lower portion of the first region toward the first dummy gate structure, and
• wherein the first epitaxial layer is disposed between the first dummy gate structure and the second region.