Method of manufacturing semiconductor devices and corresponding semiconductor device

A device, comprising:

• at least one semiconductor die arranged on a substrate;
• an encapsulation of laser direct structuring (LDS) material molded onto the at least one semiconductor die, the encapsulation having an outer surface opposite the substrate and comprising a first portion of the encapsulation between the outer surface and an intermediate level in the encapsulation as well as a second portion of the encapsulation between the substrate and said intermediate level, wherein the second portion borders the first portion at said intermediate level;
• and
• at least one electrically conductive via extending through the encapsulation of LDS material, wherein the at least one electrically conductive via comprises:
• a collar section extending through the first portion of the encapsulation from the outer surface to the intermediate level, the collar section having a cross-sectional area at the intermediate level;
• and
• a frusto-conical section extending through the second portion of the encapsulation from a first end at the intermediate level to a second end away from the intermediate level;
• wherein the first end at the intermediate level has a first diameter and an area smaller than a cross-sectional area of the collar section at the intermediate level;
• and
• wherein the second end away from the intermediate level has a second diameter that is smaller than the first diameter.

A method, comprising:

• arranging at least one semiconductor die on a substrate;
• molding an encapsulation of laser direct structuring (LDS) material onto the at least one semiconductor die arranged on the substrate, the encapsulation having an outer surface opposite the substrate;
• applying a laser to form a first opening extending into the encapsulation from the outer surface, said first opening having a bottom surface with a first cross-sectional area;
• applying a laser to form a second opening extending into the encapsulation from the bottom surface, said second opening having a first end at the bottom surface, wherein said first end has a second cross-sectional area smaller than the first cross-sectional area;
• and
• growing metal material on sidewalls of the first and second openings and on the bottom of the first opening to form an electrically conductive via extending through the encapsulation.