Semiconductor processing tool and method of operation

A method, comprising:

• determining at least one of a spacing measurement in a first dimension between a wafer on a susceptor and a pre-heat ring of a semiconductor processing tool, a gapping measurement in a second dimension between the wafer and the pre-heat ring, or a combination thereof, using one or more images captured in situ during a process by at least one optical sensor;
• generating a command based on a setting associated with the process being performed by the semiconductor processing tool and the spacing measurement, the gapping measurement, or the combination thereof;
• and
• providing the command to at least one motor to move the susceptor.

A method, comprising:

• loading a wafer having a plurality of recessed fins onto a susceptor;
• depositing doped material on the recessed fins using a semiconductor processing tool including the susceptor, wherein at least one of a spacing measurement in a first dimension between the wafer and a pre-heat ring of the semiconductor processing tool, a gapping measurement in a second dimension between the wafer and the pre-heat ring, or a combination thereof, is adjusted in situ during the deposition by at least one motor configured to move the susceptor;
• causing a first epitaxial growth on the doped material using the semiconductor processing tool, wherein at least one of an updated spacing measurement, an updated gapping measurement, or a combination thereof, is adjusted in situ during the first epitaxial growth by the at least one motor;
• and
• causing a second epitaxial growth on the doped material using the semiconductor processing tool, wherein at least one of a further updated spacing measurement, a further updated gapping measurement, or a combination thereof, is adjusted in situ during the second epitaxial growth by the at least one motor.